The 3SK41 is largely considered an . It is rarely used in new designs today, as it has been replaced by more modern surface-mount devices (SMD) like the BF998 or high-speed Gallium Arsenide (GaAs) FETs. However, it remains highly sought after by hobbyists for repairing vintage ham radios, scanners, and TV tuners.
The 3SK41 is designed for low-noise, high-gain performance at high frequencies. Below are the typical parameters for this device: Drain-Source Voltage ( cap V sub cap D cap S end-sub Drain Current ( cap I sub cap D Power Dissipation ( cap P sub cap D 250mW (0.25W) Package Type: TO-72 (4-lead metal can) Drain-Source On-Resistance ( cap R sub cap D cap S open paren o n close paren end-sub Functional Overview 3sk41 datasheet
Suitable for high-speed power management and signal switching. Common Applications The 3SK41 is largely considered an
This circuit is ideal for FM radio (88-108 MHz) or aircraft band (118-136 MHz). The 3SK41 is designed for low-noise, high-gain performance
The 3SK41 is a silicon N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced primarily by Hitachi (now Renesas) and later by NEC. Unlike a standard JFET or single-gate MOSFET, the dual-gate architecture offers a unique advantage: it combines the low-noise characteristics of a JFET with the automatic gain control (AGC) capability of a bipolar transistor.